Datasheet Summary
Advanced Power MOSFET
Features n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.)
BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A
TO-220
1 2 3
1.Gate 2. Drain 3....
