IRL530 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness.

Key Features

100 0.16.
Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Logic-Level Gate Drive.
R DS(on) Specified at VGS = 4 V and 5 V.
175 °C Operating Temperature.
F ast Switching.
Ease of Paralleling.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

📥 Download Datasheet

IRL530 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRL530
Manufacturer	Vishay
File Size	771.97 KB
Description	Power MOSFET
Datasheet	IRL530 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRL530	Power MOSFET	Fairchild Semiconductor
IRL530	Power MOSFET	International Rectifier
IRL530A	Advanced Power MOSFET	Fairchild
IRL530N	HEXFET Power MOSFET	IRF
IRL530N	N-Channel MOSFET	INCHANGE

Other Datasheets by Vishay

Part Number	Description
IRL530S	Power MOSFET
IRL510S	Power MOSFET
IRL520	Power MOSFET
IRL520L	Power MOSFET
IRL520S	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature •F ast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness.