Datasheet Summary
IRL530, SiHL530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single
Features
100 0.16
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- R DS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- F ast Switching
- Ease of Paralleling
- pliant to RoHS Directive 2002/95/EC
Available
RoHS-
PLIANT
TO-220AB
DESCRIPTION
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best bi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is...
