NDH831N
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
- 8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. 5 6 7 8 4 3 2 1
