NDH8502P Datasheet | Fairchild Semiconductor

December 1996 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features -2.2 A, -30 V. RDS(ON) = 0.11 Ω @ VGS = -10 V RDS(ON) = 0.18 Ω @ VGS = -4.5 V....