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NDH8504P Datasheet Dual P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect.

General Description

SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD.

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NDH8504P Distributor