NDH8503N Datasheet | Fairchild Semiconductor

May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8...