Download NDH854P Datasheet PDF
NDH854P page 2
Page 2
NDH854P page 3
Page 3

NDH854P Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered...

NDH854P Key Features

  • 5.1 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.052 Ω @ VGS = -4.5V. Proprietary SuperSOTTM-8 package design u