NDS8852H Datasheet Complementary MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: February 1996 NDS8852H Complementary MOSFET Half Bridge General.

NDS8852H complementary mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	NDS8852H
Manufacturer	Fairchild (now onsemi)
File Size	349.57 KB
Description	Complementary MOSFET
Download	NDS8852H Download (PDF)

General Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

Key Features

N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltag.

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