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NDS8858H - Complementry MOSFET

Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.8A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Volta.

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Datasheet Details

Part number NDS8858H
Manufacturer Fairchild
File Size 350.73 KB
Description Complementry MOSFET
Datasheet download datasheet NDS8858H Datasheet
Additional preview pages of the NDS8858H datasheet.

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Full PDF Text Transcription

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July 1996 NDS8858H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together. Features N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.8A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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