Datasheet4U Logo Datasheet4U.com

NDS9430 - 30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

20V).

Key Features

  • 5.3 A,.
  • 30 V RDS(ON) = 60 mΩ @ VGS =.
  • 10 V RDS(ON) =100 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NDS9430 May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V RDS(ON) =100 mΩ @ VGS = –4.