NDS9430A Overview
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as...
NDS9430A Key Features
- 5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell d