Datasheet4U Logo Datasheet4U.com

NDS9430A Datasheet Single P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: December 1997 NDS9430A Single P-Channel Enhancement Mode Field Effect.

General Description

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • -5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C un.

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDS9430 30V P-Channel PowerTrench MOSFET
NDS9435A 30V P-Channel MOSFET
NDS9400A Single P-Channel MOSFET
NDS9407 Single P-Channel MOSFET
NDS9410A Single N-channel MOSFET
NDS9410S Single N-channel MOSFET
NDS9925A Dual N-Channel MOSFET
NDS9933A Dual P-Channel MOSFET
NDS9936 Dual N-Channel MOSFET
NDS9945 Dual N-Channel MOSFET

NDS9430A Distributor