Description
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
Features
- -5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________
5 6 7
4
3
2
1
8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD
T A = 25°C un.
NDS9430A Datasheet
