NDS9959 Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Key Features
- RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
- Dual MOSFET in surface mount package
