Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage
T A = 25°C unless otherwise noted
NDS9959 50 ± 20
(Note 1a) (Note 1a)
Units V V A
Drain.
NDS9959 Datasheet
