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NDT410EL - N-Channel MOSFET

General Description

Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Key Features

  • 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D D G D S G S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V.