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Si4953DY - Dual P-Channel Enhancement Mode MOSFET

General Description

These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.

Key Features

  • • -4.9 A, -30 V. RDS(on) = 0.053 Ω @ VGS = -10 V RDS(on) = 0.095 Ω @ VGS = -4.5 V. • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' ' 62.
  •  6.
  •  6 $.

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Full PDF Text Transcription (Reference)

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Si4953DY June 1999 Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load switch • Motor controls Features • -4.9 A, -30 V. RDS(on) = 0.053 Ω @ VGS = -10 V RDS(on) = 0.095 Ω @ VGS = -4.5 V. • Low gate charge. • Fast switching speed. • High power and current handling capability.