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Si4953DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) –30
rDS(on) (W) 0.053 @ VGS = –10 V 0.095 @ VGS = –4.5 V
ID (A) "4.9 "3.6
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
S1 G1
S2 G2
D1 D1 P-Channel MOSFET
D2 D2 P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–30 V
"20
"4.9
"3.9 A
"30
–1.7
2.0 W
1.
Si4953DY Datasheet
