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SI4953ADY - Dual P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4.9 A (VGS =-10V).
  • RDS(ON) ＜ 53mΩ (VGS =-10V).
  • RDS(ON) ＜ 90mΩ (VGS =-4.5V) S1 S2 SOP-8 Unit:mm +0.04 0.21 -0.02 1.50 0.15 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 G1 G2 D1 D1 D2 D2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junctio.

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SMD Type Dual P-Channel MOSFET SI4953ADY (KI4953ADY) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON) ＜ 53mΩ (VGS =-10V) ● RDS(ON) ＜ 90mΩ (VGS =-4.5V) S1 S2 SOP-8 Unit:mm +0.04 0.21 -0.02 1.50 0.15 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 G1 G2 D1 D1 D2 D2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg 10 secs Steady State -30 ±20 -4.9 -3.7 -3.9 -2.9 -30 2 1.1 1.3 0.7 62.