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Si4953DY
Vishay Siliconix
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.053 @ VGS = - 10 V - 30
0.095 @ VGS = - 4.5 V
ID (A)
- 4.9 - 3.6
FEATURES D 100% Rg Tested
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4953DY Si4953DY-T1 (with Tape and Reel)
S1 G1
S2 G2
D1 D1 P-Channel MOSFET
D2 D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
- 30 "20 - 4.9 - 3.9 - 30 - 1.7 2.0 1.
Si4953DY Datasheet
