FDM6296 Description
This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds(on) and gate charge this device can be effectively used as a “high side” control switch or “low side” synchronous rectifier.
FDM6296 Key Features
- 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V
- Low Qg, Qgd and Rg for efficient switching performance
- Low Profile
- MicroFET 3.3 x 3.3 mm