FDMC86102L Description
Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching...
FDMC86102L Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
- Low Profile
- 1 mm max in Power 33
- RoHS pliant
- DC Conversion