FDMC86102LZ Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
FDMC86102LZ Key Features
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
- HBM ESD protection level > 6 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Switching