FDMS0306AS Description
Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A Advanced Package and Silicon bination for Low rDS(on) and High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design 100% UIL Tested RoHS pliant The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined...
FDMS0306AS Key Features
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A
- Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A
- Advanced Package and Silicon bination for Low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant