FDMS0312S
Overview
The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
- Max rDS(on) = 4.9 m: at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.8 m: at VGS = 4.5 V, ID = 14 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant N-Channel PowerTrench® SyncFETTM
