FDMS86201 Description
Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This...
FDMS86201 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
- Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
- DC-DC Conversion
- 55 to +150