FDMS86550ET60 Description
Extended TJ rating to 175°C Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanced Package and Silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...
FDMS86550ET60 Key Features
- Extended TJ rating to 175°C
- Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
- Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant