FQI15P12 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...
FQI15P12 Key Features
- 15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
- Low gate charge ( typical 29 nC)
- Low Crss ( typical 110 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating