H11D1 Overview
Description
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor.
Key Features
- High Voltage
- High isolation voltage
- 5300 VAC RMS
- 7500 VAC PEAK
- Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE
