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H11D1M - 6-Pin DIP High Voltage Phototransistor Optocouplers

General Description

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor

type optically coupled optoisolators.

A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.

pin dual in line pa

Key Features

  • High Voltage:.
  • MOC8204M, BVCEO = 400 V.
  • H11D1M, BVCEO = 300 V.
  • H11D3M, BVCEO = 200 V.
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN.
  • EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Insulation Voltage.

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Datasheet Details

Part number H11D1M
Manufacturer onsemi
File Size 334.62 KB
Description 6-Pin DIP High Voltage Phototransistor Optocouplers
Datasheet download datasheet H11D1M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6-Pin DIP High Voltage Phototransistor Optocouplers 4N38M, H11D1M, H11D3M, MOC8204M Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Features • High Voltage: ♦ MOC8204M, BVCEO = 400 V ♦ H11D1M, BVCEO = 300 V ♦ H11D3M, BVCEO = 200 V • Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute • DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage Applications • Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs • Appliance Sensor Systems • Industrial Controls DATA SHEET www.onsemi.