H11D1M Overview
Description
The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.
Key Features
- High Voltage
- MOC8204M, BVCEO = 400 V
- H11D1M, BVCEO = 300 V
- H11D3M, BVCEO = 200 V
- Safety and Regulatory Approvals