H11F3M Description
The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.
H11F3M Key Features
- As a Remote Variable Resistor
- As an Analog Switch
- Extremely Low Offset Voltage
- 60 Vpk-pk Signal Capability
- No Charge Injection or Latch-Up
- UL Recognized (File #E90700)
- These are Pb-Free Devices