H11F2M - Photo FET Optocouplers

Product Overview

ON Semiconductor

Datasheet Details

Part number	H11F2M
Manufacturer	ON Semiconductor
File Size	328.08 KB
Description	Photo FET Optocouplers
Datasheet	H11F2M Datasheet
Note	This datasheet PDF includes multiple part numbers: H11F2M, H11F1M. Please refer to the document for exact specifications by model.
Additional preview pages of the H11F2M datasheet.

Product details

Description

The H11FXM series consists of a Gallium Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. free control of low level AC and DC analog signals. line packages.

Features

As a Remote Variable Resistor:.
≤ 100 W to ≥ 300 MW.
≤15 pF Shunt Capacitance.
≥100 GW I/O Isolation Resistance.
As an Analog Switch:.
Extremely Low Offset Voltage.
60 Vpk.
pk Signal Capability.
No Charge Injection or Latch.
Up.
UL Recognized (File #E90700).
These are Pb.
Free Devices.

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Published: Sep 26, 2024 |