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H11F2M - Photo FET Optocouplers

Download the H11F2M datasheet PDF. This datasheet also covers the H11F1M variant, as both devices belong to the same photo fet optocouplers family and are provided as variant models within a single manufacturer datasheet.

General Description

The H11FXM series consists of a Gallium Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo

detector.

free control o

Key Features

  • As a Remote Variable Resistor:.
  • ≤ 100 W to ≥ 300 MW.
  • ≤15 pF Shunt Capacitance.
  • ≥100 GW I/O Isolation Resistance.
  • As an Analog Switch:.
  • Extremely Low Offset Voltage.
  • 60 Vpk.
  • pk Signal Capability.
  • No Charge Injection or Latch.
  • Up.
  • UL Recognized (File #E90700).
  • These are Pb.
  • Free Devices.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H11F1M-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H11F2M
Manufacturer onsemi
File Size 328.08 KB
Description Photo FET Optocouplers
Datasheet download datasheet H11F2M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Photo FET Optocouplers H11F1M, H11F2M, H11F3M General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.