H11F2M
Description
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.
Key Features
- As a Remote Variable Resistor:
- ≤ 100 W to ≥ 300 MW
- ≤15 pF Shunt Capacitance
- ≥100 GW I/O Isolation Resistance
- As an Analog Switch:
- Extremely Low Offset Voltage
- 60 Vpk-pk Signal Capability
- No Charge Injection or Latch-Up
- UL Recognized (File #E90700)
- These are Pb-Free Devices
