H11F1M - Photo FET Optocouplers

onsemi

General Description

The H11FXM series consists of a Gallium Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo

detector.

free control o

Key Features

As a Remote Variable Resistor:.
≤ 100 W to ≥ 300 MW.
≤15 pF Shunt Capacitance.
≥100 GW I/O Isolation Resistance.
As an Analog Switch:.
Extremely Low Offset Voltage.
60 Vpk.
pk Signal Capability.
No Charge Injection or Latch.
Up.
UL Recognized (File #E90700).
These are Pb.
Free Devices.

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H11F1M photo fet optocouplers by onsemi - Datasheet Preview

Datasheet Details

Part number	H11F1M
Manufacturer	onsemi
File Size	328.08 KB
Description	Photo FET Optocouplers
Datasheet	H11F1M Datasheet

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Part Number	Description
H11F2M	Photo FET Optocouplers
H11F3M	Photo FET Optocouplers
H11A1M	6-Pin General Purpose Phototransistor Optocoupler
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Full PDF Text Transcription (Reference)

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Photo FET Optocouplers H11F1M, H11F2M, H11F3M General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.