Datasheet Summary
Photo FET Optocouplers
H11F1M, H11F2M, H11F3M
General Description The H11FXM series consists of a Gallium- Aluminum- Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon photo- detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion- free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in- line packages.
Features
- As a Remote Variable Resistor:
- ≤ 100 W to ≥ 300 MW
- ≤15 pF Shunt Capacitance
- ≥100 GW I/O Isolation Resistance
- As an Analog Switch:
- Extremely Low Offset Voltage
- 60 Vpk- pk Signal Capability
- No Charge Injection or Latch- Up
- UL Recognized...
