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LPD200 - HIGH PERFORMANCE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Features

  • S.
  • 21 dBm Output Power at 1-dB Compression at 18 GHz.
  • 12 dB Power Gain at 18 GHz.
  • 1.0 dB Noise Figure at 18 GHz.
  • 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE.

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Datasheet Details

Part number LPD200
Manufacturer Filtronic Compound Semiconductors
File Size 30.41 KB
Description HIGH PERFORMANCE PHEMT
Datasheet download datasheet LPD200 Datasheet
Additional preview pages of the LPD200 datasheet.

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Full PDF Text Transcription

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HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm) • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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