Datasheet Summary
HIGH PERFORMANCE PHEMT
- Features
- 21 dBm Output Power at 1-dB pression at 18 GHz
- 12 dB Power Gain at 18 GHz
- 1.0 dB Noise Figure at 18 GHz
- 55% Power-Added Efficiency
GATE BOND PAD (2X)
DRAIN BOND PAD (2X)
SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)
- DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate...