LPD200 Datasheet High Performance Phemt

Manufacturer: Filtronic Compound Semiconductors

Overview: HIGH PERFORMANCE PHEMT •.

Datasheet Details

Part number	LPD200
Manufacturer	Filtronic Compound Semiconductors
File Size	30.41 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	LPD200_FiltronicCompoundSemiconductors.pdf

General Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.

The epitaxial structure and processing have been optimized for high dynamic range.

Key Features

S.
21 dBm Output Power at 1-dB Compression at 18 GHz.
12 dB Power Gain at 18 GHz.
1.0 dB Noise Figure at 18 GHz.
55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE.

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