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LPD200P70 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.

Features

  • S.
  • 20 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 16 dB Small Signal Gain at 2 GHz.
  • 0.8 dB Noise Figure at 2 GHz LPD200P70.

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Datasheet Details

Part number LPD200P70
Manufacturer Filtronic Compound Semiconductors
File Size 61.03 KB
Description PACKAGED HIGH DYNAMIC RANGE PHEMT
Datasheet download datasheet LPD200P70 Datasheet
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Full PDF Text Transcription

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PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LPD200P70 • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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