LPD200P70 Overview
AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for...
LPD200P70 Key Features
- 20 dBm Output Power at 1-dB pression at 18 GHz
- 9.5 dB Power Gain at 18 GHz
- 16 dB Small Signal Gain at 2 GHz
- 0.8 dB Noise Figure at 2 GHz
- DESCRIPTION AND