LPD200SOT343 Overview
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic...
LPD200SOT343 Key Features
- 0.6 dB Noise Figure at 2 GHz
- 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
- 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
- 50% Power-Added-Efficiency at 2 GHz
- DESCRIPTION AND