Datasheet Details
| Part number | LPD200SOT343 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 68.03 KB |
| Description | PACKAGED HIGH DYNAMIC RANGE PHEMT |
| Datasheet | LPD200SOT343_FiltronicCompoundSemiconductors.pdf |
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Overview: PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT.
| Part number | LPD200SOT343 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 68.03 KB |
| Description | PACKAGED HIGH DYNAMIC RANGE PHEMT |
| Datasheet | LPD200SOT343_FiltronicCompoundSemiconductors.pdf |
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AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynamic range.
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| Part Number | Description |
|---|---|
| LPD200 | HIGH PERFORMANCE PHEMT |
| LPD200MX | HIGH PERFORMANCE PHEMT |
| LPD200P70 | PACKAGED HIGH DYNAMIC RANGE PHEMT |