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LPD200SOT343 - PACKAGED HIGH DYNAMIC RANGE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

  • S.
  • 0.6 dB Noise Figure at 2 GHz.
  • 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz.
  • 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz.
  • 50% Power-Added-Efficiency at 2 GHz.

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Datasheet Details

Part number LPD200SOT343
Manufacturer Filtronic Compound Semiconductors
File Size 68.03 KB
Description PACKAGED HIGH DYNAMIC RANGE PHEMT
Datasheet download datasheet LPD200SOT343 Datasheet
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Full PDF Text Transcription

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PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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