Datasheet Summary
PRELIMINARY DATA SHEET
PACKAGED HIGH DYNAMIC RANGE PHEMT
- Features
- 1.0 dB Noise Figure at 1.8 GHz
- 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
- 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
- 31 dBm IP3 at 1.8 GHz
- 60% Power-Added-Efficiency
- DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high...