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LPD200MX - HIGH PERFORMANCE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

  • S.
  • 1.0 dB Noise Figure at 1.8 GHz.
  • 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz.
  • 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz.
  • 31 dBm IP3 at 1.8 GHz.
  • 60% Power-Added-Efficiency LPD200MX.

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Datasheet Details

Part number LPD200MX
Manufacturer Filtronic Compound Semiconductors
File Size 68.94 KB
Description HIGH PERFORMANCE PHEMT
Datasheet download datasheet LPD200MX Datasheet
Additional preview pages of the LPD200MX datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency LPD200MX • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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