• Part: MRF5S9150HSR3
  • Description: SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
  • Manufacturer: Freescale Semiconductor
  • Size: 554.25 KB
Download MRF5S9150HSR3 Datasheet PDF
Freescale Semiconductor
MRF5S9150HSR3
MRF5S9150HSR3 is SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs manufactured by Freescale Semiconductor.
- Part of the MRF5S9150HR3 comparator family.
Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. - Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain - 19.7 dB Drain Efficiency - 28.4% ACPR @ 750 kHz Offset - - 46.8 dBc in 30 kHz Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc,...