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MRF5S9150HSR3 - SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Download the MRF5S9150HSR3 datasheet PDF. This datasheet also covers the MRF5S9150HR3 variant, as both devices belong to the same single n-cdma lateral n-channel rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Small Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 13 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 μF, 50 V Tantalum Capacitor 20K pF Chip Cap

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters www. DataSheet4U. com.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG. , 28 V SI.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S9150HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors Motorola
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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9100NBR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9101NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 28.4% ACPR @ 750 kHz Offset — - 46.