MRF6S19060NR1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S19060NR1, a member of the MRF6S19060NBR1 RF Power Field Effect Transistors family.

Product Overview

Freescale Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	MRF6S19060NR1
Manufacturer	Freescale Semiconductor
File Size	636.01 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19060NR1 Datasheet
Additional preview pages of the MRF6S19060NR1 datasheet.

MRF6S19060NR1 Product details

Description

100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

📁 Similar Datasheet

MRF6S21140HR3 - RF Power FET (NXP)
MRF6S21140HSR3 - RF Power FET (NXP)
MRF6S9060MBR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060MR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060NBR1 - RF Power Field Effect Transistors (NXP)
MRF6S9060NR1 - RF Power Field Effect Transistors (NXP)
MRF604 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF604 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
MRF607 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF607 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)

Other Datasheets by Freescale Semiconductor

MRF6S19060NBR1 - RF Power Field Effect Transistors
MRF6S19100HR3 - RF Power Field Effect Transistors
MRF6S19100HSR3 - RF Power Field Effect Transistors
MRF6S19100NBR1 - RF Power Field Effect Transistors
MRF6S19100NR1 - RF Power Transistors
MRF6S19120HR3 - RF Power Transistors
MRF6S19120HSR3 - RF Power Transistors
MRF6S19140HR3 - N-Channel Enhancement-Mode Lateral MOSFETs

Published: Nov 27, 2006 |