Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF6S19140H Rev. 2, 7/2005
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
- PCS/cellular radio and WLL applications.
- Typical 2
- carrier N
- CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band. IS
- 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain
- 16 dB Drain Efficiency
- 27.5% IM3 @...