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MRF6S19140HSR3 - N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF6S19140HSR3 datasheet PDF. This datasheet also covers the MRF6S19140HR3 variant, as both devices belong to the same n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitors 470 µF, 63 V Electrolytic Capacitor 560 kΩ, 1/8 W Chip Resistors (1206) 1.0 kΩ, 1/8 W Chip Resistors (1206) 12 Ω, 1/8 W Chip Resistors (1206) Part Number 274301944

Key Features

  • 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S19140HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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MRF6S21140HSR3 RF Power FET NXP
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
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MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3 RF Power Field Effect Transistors
MRF6S19100HSR3 RF Power Field Effect Transistors
MRF6S19100NBR1 RF Power Field Effect Transistors
MRF6S19100NR1 RF Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.