MRF6S21100NBR1 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - 200°C Capable Plastic Package - N Suffix Indicates Lead - Free Terminations. Ro HS pliant. - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21100NR1 MRF6S21100NBR1 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21100NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 73°C, 23 W CW Symbol RθJC Value (1,2) 0.57 0.66 Unit °C/W 1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6S21100NR1 MRF6S21100NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per...