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MRFE6S9205HR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21.2 dB Drain Efficiency — 34% Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.1 dBc in 3.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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