MRFE6S9060NR1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data RF Power Field Effect Transistor - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. - Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 m A, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 21.1 d B Drain Efficiency - 33% ACPR @ 750 k Hz Offset - - 45.7 d Bc in 30 k Hz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 d B Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 m A, Pout = 21 Watts Avg., Full Frequency Band (920 - 960 MHz) Power Gain - 20 d B Drain Efficiency - 46% Spectral Regrowth @ 400 k Hz Offset = - 62 d Bc Spectral Regrowth @ 600 k Hz Offset = - 78 d Bc EVM - 1.5% rms GSM Application - Typical GSM Performance: VDD = 28 Volts, IDQ = 500 m A, Pout = 60 Watts, Full Frequency Band (920 - 960 MHz) Power Gain - 20 d B Drain Efficiency - 63% Features - Characterized with Series Equivalent...