MRFE6S9125NBR1 Description
Freescale Semiconductor Technical Data Document Number: 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 28 volt base station equipment.
MRFE6S9125NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings
- Source Voltage Gate
- Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Tempera
- CDMA, GSM EDGE LATERAL N