MRFE6S9135HSR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station equipment. - Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 m A, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 d B @ 0.01% Probability on CCDF. Power Gain - 21 d B Drain Efficiency - 32.3% Device Output Signal PAR - 6.4 d B @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset - - 39.5 d Bc in 3.84 MHz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW (3 d B Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Optimized for Doherty Applications - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9135HR3 MRFE6S9135HSR3 940 MHz, 39 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE...