MRFE6S9130HSR3 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. - Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 19.2 d B Drain Efficiency - 30.5% ACPR @ 750 k Hz Offset - - 47.6 d Bc in 30 k Hz Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 d B Overdrive, Designed for Enhanced Ruggedness Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9130H Rev. 1, 12/2008 MRFE6S9130HR3 MRFE6S9130HSR3 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1...