MRFE6S9125NR1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 28 volt base station equipment. N - CDMA Application - Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 m A, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 20.2 d B Drain Efficiency - 31% ACPR @ 750 k Hz Offset = - 45.7 d Bc in 30 k Hz Bandwidth - Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 d B Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application - Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz) Power Gain - 20 d B Drain Efficiency - 40% Spectral Regrowth @ 400 k Hz Offset = - 63 d Bc Spectral Regrowth @ 600 k Hz Offset = - 78 d Bc EVM - 1.8% rms GSM Application - Typical GSM Performance: VDD = 28 Volts, IDQ = 700 m A, Pout = 125 Watts, Full Frequency Band (920 - 960 MHz) Power Gain - 19 d B Drain Efficiency - 62% Features - Characterized with Series Equivalent Large - Signal Impedance...