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MRFE6S9130HR3 - RF Power FET

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9130H Rev. 1, 12/2008 MRFE6S9130HR3 MRFE6S9130HSR3 880 MHz, 27 W AVG. , 28 V SINGLE N - CDMA.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S9130HSR3 RF Power FET
MRFE6S9135HR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9135HSR3 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 47.