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AO4576 - 30V N-Channel AlphaMOS

Description

Latest Trench Power AlphaMOS ( α MOS LV) technology Very Low RDS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant

Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 20A < 5.8mΩ < 9.8mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike Power Dissipation B 100ns TA=25°C TA=100°C TA=25°C TA=100°C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG Maximum 30 ±20 20 12 144 25 31 36 3.1 1.2 -55 to 150 Units V V A A mJ V W °C J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4576 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( α MOS LV) technology • Very Low RDS(on) at 4.5V GS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 20A < 5.8mΩ < 9.8mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike Power Dissipation B 100ns TA=25°C TA=100°C TA=25°C TA=100°C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG Maximum 30 ±20 20 12 144 25 31 36 3.1 1.
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