Datasheet Details
| Part number | FGW40N65WE |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 625.92 KB |
| Description | Discrete IGBT |
| Datasheet |
 FGW40N65WE Datasheet
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| Part number | FGW40N65WE |
|---|---|
| Manufacturer | Fuji Electric |
| File Size | 625.92 KB |
| Description | Discrete IGBT |
| Datasheet |
FGW40N65WE Datasheet
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Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 40mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 40A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 40A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy VGE = 15V td(on) tr td(off) tf Eon Eoff Tj = 25°C, VCC = 400V IC = 20A, VGE = 15V RG = 10Ω, L = 500μH Energy los
FGW40N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.
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