2SK3593-01
2SK3593-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Unit V 150 V
- 5 120 A Continuous drain current ±57 A ±5.4
- - A Pulsed drain current ID(puls] ±228 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS
- 2 57 m J Maximum Avalanche Energy EAS
- 1 272.5 k V/µs Maximum Drain-Source d V/dt d VDS/dt
- 4 20 k V/µs Peak Diode Recovery d V/dt d V/dt
- 3 5 W Max. power dissipation PD Ta=25°C 2.4
- - Tc=25°C 270 °C Operating and storage Tch +150 -55 to +150 °C temperature range Tstg
- - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C
- 1 L=123µH, Vcc=48V, See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF<
- 4 VDS <
- 5 VGS=-30V = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V Drain-source voltage V DS VDSX ID Item Symbol Ratings Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source S2 : Source
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=10 Ω VCC =75V ID=40A VGS=10V L=123µH Tch=25°C IF=40A VGS=0V...