• Part: 2SK3593-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 131.67 KB
Download 2SK3593-01 Datasheet PDF
Fuji Electric
2SK3593-01
2SK3593-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Unit V 150 V - 5 120 A Continuous drain current ±57 A ±5.4 - - A Pulsed drain current ID(puls] ±228 V Gate-source voltage VGS ±30 A Non-repetitive Avalanche current IAS - 2 57 m J Maximum Avalanche Energy EAS - 1 272.5 k V/µs Maximum Drain-Source d V/dt d VDS/dt - 4 20 k V/µs Peak Diode Recovery d V/dt d V/dt - 3 5 W Max. power dissipation PD Ta=25°C 2.4 - - Tc=25°C 270 °C Operating and storage Tch +150 -55 to +150 °C temperature range Tstg - - Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25°C - 1 L=123µH, Vcc=48V, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< - 4 VDS < - 5 VGS=-30V = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V Drain-source voltage V DS VDSX ID Item Symbol Ratings Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=10 Ω VCC =75V ID=40A VGS=10V L=123µH Tch=25°C IF=40A VGS=0V...