FGW40N65WE
FGW40N65WE is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tj=25°C (unless otherwise specified)
Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbols VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
- Diode Forward Current
IF@25 IF@100
Diode Pulsed Current
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 650 ±20 ±30 56 40 160
61 40 160 260 155 -40 ~ +175 -55 ~ +175
Unit
Remarks
V Tp<1µs
A TC=25°C
A TC=100°C
A Note
- 1
VCE≤650V Tj≤175°C
A Note
-...
