FGW75N60H
FGW75N60H is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply Power coditionner Power factor correction circuit
Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items Collector-Emitter Voltage
Gate-Emitter Voltage
Symbols VCES
VGES
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
IC@25
IC@100 ICP
- Short Circuit Withstand Time t SC
Maximum Power Dissipation
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 600 ±20
75 225 225
500 -40 ~ +175 -55 ~ +175
Units
Remarks
TC=25°C, Tj=150°C Note
- 1
A TC=100°C, Tj=150°C
A Note
- 2
A VCE≤600V, Tj≤175°C
μs
VCC≤300V, VGE=12V Tj≤150°C
W...